机译:使用AlGaAs / GaAs HBT的30 Gbit / s 1:4解复用器IC
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA;
III-V semiconductors; aluminium compounds; bipolar digital integrated circuits; demultiplexing equipment; gallium arsenide; heterojunction bipolar transistors; time division multiplexing; 30 Gbit/s; AlGaAs-GaAs; HBT; circuit architecture; demultiplexer IC; heterojunction bipolar technology; high speed integrated circuit; output bit alignment; self-generated internal clock; system clock frequency; two-stage configuration;
机译:27 Gbit / s AlGaAs / GaAs LBT 1:2再生解复用器IC
机译:采用AlGaAs / GaAs HBT技术制造的封装式30 Gbit / s数据多路分解和时钟提取IC
机译:利用AlGaAs / GaAs HBT实现的高速8:1多路复用器和1:8多路分解器
机译:植入AlGaAs / GaAs HBT的高速8:1多路复用器和1:8解复用器
机译:高功率拟晶AlGaAs / InGaAs高电子迁移率晶体管的材料,物理学,器件物理学和技术。
机译:掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
机译:具有薄基底的alGaas / Gaas和GaInp / Gaas(D)HBT的实验I-V特性