A high-capacitance ratio implanted MMIC varactor for broadbandphase shifters and tuners

摘要

A new variable-area ion-implanted varactor has been developed toincrease the available capacitance ratio from the conventionallyobtained values of 3.5:1 to values in excess of 12:1. the newvariable-area varactor uses a channel implant with a depth and dopingprofile that varies rapidly across the anode width; this yields aSchottky barrier capacitor with an active area that decreases as thedepletion depth increases, in contrast to conventional varactors wherefringing yields an active area that increases. RF resonance data as afunction of DC bias for the new varactor design show low loss(f_c