SON (Silicon on Nothing) MOSFET using ESS (Empty Space in Silicon)technique for SoC applications

摘要

SON (Silicon on Nothing) MOSFET was successfully fabricated forthe first time by using ESS (Empty Space in Silicon) technique as analternative of SOI-MOSFET. Advantage of SON structure was experimentallydemonstrated. SON structure using ESS technique is appropriate forSystem on a Chip (SoC) applications, such as embedded trench DRAMs anddigital-analog mixed devices, due to the merit that SON structure can befabricated partially on bulk substrate