High performance 0.25-um CMOS color imager technology withnon-silicide source/drain pixel

摘要

A high performance 0.25 um CMOS image sensor technology has beendeveloped to overcome device scaling and process issues. Non-silicidesource/drain pixel (3 transistors, 3.3 um×3.3 um, fill factor:28%) is provided to reduce dark current and increase photoresponse. Byoptimizing thermal oxide in STI structure, double ion implantedsource/drain junction and using H₂ annealing, the darkcurrent can be drastically reduced (less than 0.5 fA per pixel). Thecolor pixel performance with microlens and related crosstalk charactersare also reported in this paper. Two photodiode structures are used tocharacterize pixel performance. The result shows NW/Psub photodiodedemonstrate reduced dark current and higher sensitivity than N+PW diode