A novel atomic layer doping technology for ultra-shallow junctionin sub-0.1 μm MOSFETs

摘要

This paper presents a novel technology to form an ultra-shallowsource and drain extension (SDE) junctions for the future MOSFETs. Inthis technology, a dopant in an adsorbed layer on the Si surfacediffuses into the substrate by the rapid thermal annealing (RTA).Shallow junction formation using arsenic (As) diffusion and boron (B)diffusion was realized by using this technology. This technologyprovided extremely shallow SDE junction depths with low sheet resistancefor N and P-type doping