A novel atomic layer doping technology for ultra-shallow junction in sub-0.1 /spl mu/m MOSFETs

摘要

This paper presents a novel technology to form an ultra-shallow source and drain extension (SDE) junctions for the future MOSFETs. In this technology, a dopant in an adsorbed layer on the Si surface diffuses into the substrate by the rapid thermal annealing (RTA). Shallow junction formation using arsenic (As) diffusion and boron (B) diffusion was realized by using this technology. This technology provided extremely shallow SDE junction depths with low sheet resistance for N and P-type doping.