PVD TiN metal gate MOSFETs on bulk silicon and fully depletedsilicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOStechnology

摘要

We report here for the first time an evaluation of a polysiliconcapped physical vapor deposited (PVD) titanium nitride (TiN) metal gateintegration on sub-quarter micron CMOSFETs using bulk Si and FDSOIsubstrates. In addition to eliminating poly depletion effects andlowering gate line resistance, the use of the TiN gate enables lower Vtwhen used with FDSOI substrates instead of bulk Si. Excellent on-off andshort channel characteristics can be obtained with the TiN gate. Issuesassociated with Leff and reliability are also discussed