New method for verification of analytical device models usingtransistor parameter fluctuations MOSFETs

摘要

In this work device parameter fluctuations are considered forverification of analytical device models. We focus on the (WL)-1/2-dependence of the standard deviation of the threshold voltageσ_Vt [1-6]. Besides the known contribution from dopingvariations, an explicit channel length dependence enhances substantiallythe (WL)-1/2-curve. Oxide thickness variation is shown tohave minor influence on the V_T-fluctuation and thecontribution of mobility fluctuation is completely negligible for a 0.5μm process. It has been found that a percolation model for thecurrent paths through the device can give full account of theexperimentally measured values of σ_Vt