A vertical cavity longwave infrared SiGe/Si photodetector using aburied silicide mirror

摘要

We describe the fabrication, modelling and performance of aresonant cavity detector using epitaxial p-type SiGe/Si quantum wellsgrown over a high reflectance tungsten silicide layer. The deviceoperates in the 8-12 μm band in normal incidence and has a black bodyresponsivity comparable to current n-GaAs/AlGaAs detectors at ~1 V,making it suitable for integration in a monolithic Si-based focal planearray. Ways to improve the design are discussed