A combined transport-injection model for hot-electron and hot-holeinjection in the gate oxide of MOS structures

摘要

In this paper, we present a unified model for electron and holetransport and injection into the gate oxide of MOS devices based on ourMonte Carlo simulator BeBoP. The injection problem has been tackled bymeans of a simplified analytical solution of the Schrodinger equationacross the Si-SiO₂ gate barrier, that leads to a directcalculation of the transfer probability from Si into the gate(P_Si-G). With appropriate choice of parameters the modelreproduces a wide set of experiments sensitive to low and high energytransport phenomena, including for the first time homogeneous holeinjection data