A novel salicide process (SEDAM) for sub-quarter micron CMOSdevices

摘要

A new salicide process, featuring selective silicon deposition andsubsequent pre-amorphization (SEDAM), has been developed for sub-quartermicron CMOS devices. Non-doped silicon films were selectively depositedon gate and source/drain regions to avoid silicidation suppression dueto heavily-doped As. Furthermore, silicidation was enhanced bypre-amorphization on the narrow gate and source/drain regions.TiSi₂ films, with a sheet resistance of ⩽10 Ω/sq.,were stably and uniformly formed on all n+- andp+-poly-Si and source/drain diffusion layers for 0.15 μmCMOS devices without degradation in the I-V characteristics