A novel band-to-band tunneling induced convergence mechanism forlow current, high density flash EEPROM applications

摘要

A new low current two-step erasing scheme for“repairing” over-erased flash EEPROM cells has beendeveloped. The cell convergence is achieved with 10 V on the controlgate and 5 V on the source and drain for 50 ms. The convergence currentis kept to below 1 nA per cell. A substrate BTBT tunneling induced hotelectron injection mechanism is proposed for convergence. No significantoxide degradation is seen in the method