首页> 外文会议>Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International >A new abrasive-free, chemical-mechanical-polishing technique foraluminum metallization of ULSI devices
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A new abrasive-free, chemical-mechanical-polishing technique foraluminum metallization of ULSI devices

机译:一种新的无磨料化学机械抛光技术,用于ULSI设备的铝金属化

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A new polishing technique for the aluminum (Al) metallization isdeveloped, referred to as an Abrasive-Free,Chemical-Mechanical-Polishing (AFP) technique, in which aqueous amineand hydrogen-peroxide (H2O2) solution is used as apolishing liquid. Scratch-free Al plugs embedded in SiO2films are obtained by the AFP with the high polishing selectivity of theAl to SiO2
机译:铝(Al)金属化的一种新抛光技术是 开发,称为无磨料, 化学机械抛光(AFP)技术,其中胺水溶液 过氧化氢(H 2 O 2 )溶液用作 抛光液。嵌入SiO 2 的无划痕Al塞 通过AFP获得的薄膜具有很高的抛光选择性。 Al到SiO 2

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