A novel three-teminal GaAs negative differential resistance device prepared by molecular beam epitaxy is developed. It's a new "N" shaped voltage controlled device utilizing a n+-i- δp+-i-n+bulk barrier transistor structure with a V-grooved metal contact to the δp+thin base. The peak-to-valley current ratios can be modulated by the third external applied voltage. A large peak-to-valley current ratio of 98 was obtained for a base to emitter forward bias of 5.0V at room temperature, at an applied emitter-collector bias of 5.7V.
展开▼
