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Multiple-function GaAs transistors with very strong negative differential resistance phenomena
Multiple-function GaAs transistors with very strong negative differential resistance phenomena
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机译:具有非常强的负差分电阻现象的多功能GaAs晶体管
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摘要
Disclosed in this invention is a new four-terminal type and multiple delta-doped transistors with multiple functions grown by low- pressure metalorganic chemical vapor deposition (LP-MOCVD). All the epilayers are grown on n.sup.+ -GaAs substrates. The real-space transfer transistors (RST), the collector is located under the substrate, reveal very strong negative differential resistance phenomena. The RST structure using an InGaAs channel manifests superior characteristics of a very high peak-to- valley current ratio up to 430,000 at room temperature, a peak current as high as 100 mA, very sharp charge injection, and a valley current as broad as 5.5V. Meanwhile, high performance heterostructure field effect transistors can be implemented on the same wafer by further evaporating a gate between source and drain electrodes. In order to significantly reduce leakage current, an ohmic recession is made at the source and drain. These new multiple-functions device may be used in high- speed, low- noise, and/or high power microwave oscillators and amplifiers.
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