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Complementary MODFET circuits consisting of pseudomorphic NMODFET and double heterojunction PMODFET by selective molecular beam epitaxy

机译：通过选择性分子束外延由伪晶态NMODFET和双异质结PMODFET组成的互补MODFET电路

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《Electron Devices Meeting, 1987 International》||p.892-894|共3页
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Yoh K.; Harris J.S. Jr.;
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1. Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy [J] . Wang Y.C., Kuo J.M. IEEE Electron Device Letters . 1997,第11期

机译：单/双异质结In / sub 0.5 /（Al / sub 0.3 / Ga / sub 0.7 /）/ sub 0.5 / P / In / sub 0.2 / Ga / sub 0.8 /作为由气体源分子生长的高电子迁移率晶体管束外延
2. Optical responses of InGaP/GaAs/InGaAs P-channel double heterojunction pseudomorphic MODFET [J] . Kim H.J., Kim S.H. Electronics Letters . 1998,第1期

机译：InGaP / GaAs / InGaAs P沟道双异质结拟态MODFET的光学响应
3. Optimized double heterojunction pseudomorphic InP/In/sub x/Ga/sub 1-x/As/InP (0.64>or=x>or=0.82)p-MODFETs and the role of strain in their design [J] . Kusters A.M., Kohl A. IEEE Transactions on Electron Devices . 1993,第12期

机译：优化的双异质结伪晶格InP / In / sub x / Ga / sub 1-x / As / InP（0.64> or = x> or = 0.82）p-MODFET及其设计中的应变作用
4. Characterization of pseudomorphic InGaAs/AlGaAs MODFET structures grown by molecular beam epitaxy [C] . Henderson T., Reddy U.K., Ji G., Electron Devices Meeting, 1987 International . -1

机译：分子束外延生长的准晶态InGaAs / AlGaAs MODFET结构的表征
5. Indium Phosphide Heterojunction Bipolar Transistors with Emitter Regrowth by Molecular Beam Epitaxy. [D] . Scott, Dennis W. 2013

机译：发射极通过分子束外延生长的磷化铟异质结双极晶体管。
6. Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy [O] . Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, -1

机译：分子束外延生长CuGaSe2 / CuInSe2双异质结界面的研究
7. Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy [O] . Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, 2015

机译：分子束外延生长CuGase2 / CuInse2双异质结界面的研究
8. Fabrication and I-V Characterization of AlGaAs/GaAs MODFETs with P-Type Surface Layers Grown by Molecular Beam Epitaxy [R] . Szabo, K. 1984

机译：分子束外延生长p型表面层alGaas / Gaas mODFET的制备和I-V表征

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Complementary MODFET circuits consisting of pseudomorphic NMODFET and double heterojunction PMODFET by selective molecular beam epitaxy

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