Characterization of IC devices fabricated in low temperature (550°c) epitaxy by UHV/CVD technique

摘要

Sub-micron insitu doped silicon epitaxial films have been successfully grown at temperatures as low as 550°C by a novel UHV/CVD process. Extensive electrical characterization of test devices fabricated in these films using low temperature (≤ 880°C) processing indicated that the epilayers were of high quality. The n+-p junctions exhibit ideal characteristics with ideality of 1.0, and reverse bias leakage current density of < 2.5 fA µm-2at 5 Volts. Carrier lifetime measurement from MOS capacitors was as high as 160 µsecs. C-V and oxide breakdown data further confirmed the suitability of these layers for VLSI devices.