Calculations of cut-off frequency, breakdown voltage and capacitance for diffused junctions in thin epitaxial layers

摘要

Recent developments in high quality silicon varactors for low-noise parametric amplifiers and high-efficiency harmonic generators necessitate the use of epitaxial silicon layers that are thinner than 10 microns, with resistivity less than 1 Ω-cm. This paper extends Breitschwerdt's recent calculations to such thin epitaxial layers and also includes the calculation of series resistance and capacitance per unit area in a range useful for microwave diode design.