In situ characterization of remote plasma treated and passivatedInP by integral photoluminescence

摘要

The authors report on a downstream PECVD (plasma-enhanced chemicalvapor deposition) apparatus which allows low-temperature deposition ofpassivating and insulating films on III/V materials using silicoorganics as source compounds. In combination with an arrangement for themeasurement of the integral photoluminescence signal, this apparatusallows process control and optimization in view of the electronicproperties of the semiconductor surface. This technique allowsdeposition of silicon dioxide at a temperature below 150° C. C(V) and I(V) measurements performed onSiO₂/Si MIS capacitors showed the electronic characteristicsof the oxide films to be satisfactory; C(V) curves ofSiO₂/InP capacitors revealed that the InP surface is notdegraded by the deposition process