We present first-principles calculations of electronic and transport properties of silicon (Si) nanorods with sizes smaller than the Bohr radius, doped with single phosphorus (P) or co-doped with P and B (boron). For P-doped nanorods, we found that the first conductive energy state (1 CS) remains nearly unchanged by reducing the nanorod size, resulting in an electron binding energy (E) practically independent on size. This is due to the counterbalance between quantum confinement and attractive interaction from the P donor. We show, however, that E depends on the P position in Si cross-shaped nanostructures. Finally, the impact of P-B interaction on electronic and transport properties of Si nanostructures is investigated.
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