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An ultra low-voltage standard cell library in 65-nm CMOS process technology

机译:采用65纳米CMOS工艺技术的超低压标准单元库

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In this paper, the design of an ultra-low voltage standard cell library is discussed. This includes the design constraints in designing each gate on a schematic level as well as techniques used in designing the layout. The method of performing timing and power characterization of the standard cell library and how the logical and physical library files are generated are discussed. The accuracy of the standard cell library is then verified through the use of several test circuits.
机译:本文讨论了超低压标准单元库的设计。这包括在原理图级别上设计每个门的设计约束,以及在设计布局时使用的技术。讨论了执行标准单元库的时序和功率表征的方法,以及如何生成逻辑库文件和物理库文件。然后通过使用几个测试电路来验证标准单元库的准确性。

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