Structural and electrical properties of modified CMOS device under radiation environment in designing of voltage control oscillator (VCO)

摘要

This paper shows the structural CMOS with and without radiation and variation of electrical properties of device under various radiations doses and proposes a modified CMOS circuit which mitigates radiation effect by improving switch point in I-V characteristic. In order to redesign the circuit for radiation resistance; the above radiation hardened inverter circuit is used to design the Voltage Controlled Oscillator using Radiation Hardened By Design (RDBD) technique. The circuit exhibits only minimal degradation with total dose when irradiated.