Ka-Band High Power GaN SPDT Switch MMIC

摘要

A Ka-Band high power GaN/SiC reflective SPDT Switch MMIC is demonstrated with unprecedented 49dBm P1dB and at least 58dBm survival threshold. The key enabling semiconductor technology is Raytheon's mm-Wave GaN HEMT with 1.36 ohm-mm Ron and 0.131 pF/mm Coff. Measured insertion loss is better than 1.3 dB over 27-31 GHz, and the minimum insertion loss of 0.8 dB has achieved at higher frequencies. Measured isolation is greater than 25 dB over 27-31 GHz, with the highest isolation of 30 dB at higher frequencies.