GaN Transistors - The Best Emerging Technology for Power Conversion from DC through RF

摘要

It has been three years since the first gallium nitride transistors were delivered as power MOSFET replacements in a commercial power conversion application. Since that time there has been major interest, and rapid progress in the development and commercialization of this new technology. In this paper we will give an update on GaN technology, its performance compared with power MOSFETs and LDMOS RF transistors, as well as the status of "early adopters" in the world of power conversion.