A Q-Band/W-Band Dual-Band Power Amplifier in 0.12 µm SiGe BiCMOS Process

摘要

Abstract-- A three-stage dual-band power amplifier is demonstrated in 0.12 um silicon germanium (SiGe) BiCMOS process at both Q-band and W-band. The first two stages are pseudo-differential pre-amplifiers with a high-impedance dual-band load. The final stage is a single-ended power amplifier with an appropriate impedance to produce output power. The collector-emitter junction breakdown voltage of the amplifier is extended with a low-impedance base current biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 15% with 14 dBm maximum saturated power (Psat) at 43 GHz and 9 dBm Psat at 82 GHz. The effective chip area is 1mm^2 including input and output RF GSG pads.