Temperature-dependent Delay, Power and Frequency Analysis of Multilayer Graphene Nanoribbon Interconnects

摘要

Graphene nanoribbon(GNR) is gradually emerging as plausible interconnect material in deep sub-micron(DSM) technology nodes. This paper addresses the role of temperature on the performance of multilayer graphene nanoribbon (MLGNR) in terms of signal delay, power dissipation and frequency analysis. The paper further compares the performance of MLGNR with that of copper(Cu) interconnects by using both conventional (temperature-independent) and temperature-dependent models at 14 nm technology node. It is noted that, as temperature is increased from 300K to 500K, signal delay and power dissipation of MLGNR is lower as compared to copper interconnects. Also, through frequency analysis it can be noted that the loss in signal power is more in the case of copper interconnects as compared to MLGNR interconnects. Moreover, simulated results reveal that on different lengths, ranging from 400μm to 1000μm, signal delay in MLGNR by using temperature-dependent models in comparison to temperature-independent models is significantly low. On the other hand, small improvement has also been seen in case of power dissipation for same interconnect lengths. The results also gives the effect of temperature on the frequency spectrum of MLGNR interconnects. It is found that the increase in temperature causes the loss in signal power and decrease in bandwidth in MLGNR interconnects.