Experimental characterization of p-channel polysilicon conductivitymodulated thin-film transistors

摘要

A p-channel poly-Si CMTFT (Conductivity Modulated Thin-FilmTransistor) is demonstrated and experimentally characterized. Thetransistor uses the concept of conductivity modulation in the offsetregion to obtain a significant reduction in on-state resistance. Thisstructure can provide 1.5 to 2 orders of magnitude higher on-statecurrent than that of the conventional offset drain TFT at drain voltageranging from -15 V to -5 V while still maintaining low leakage currentand simplicity in device operation. The p-channel CMTFT can be combinedwith the n-channel CMTFT to form CMOS high voltage drivers, which arevery suitable for use in fully integrated large area electronicapplications