Electrical and FT-IR measurements of undoped n-type InP materialsgrown from various stoichiometric melts

摘要

P-rich, In-rich and stoichiometric undoped InP melts have beensynthesised by phosphorus in-situ injection method. InP crystal ingotshave been grown from these melts by the liquid encapsulated Czochralskimethod (LEC). Samples from these ingots grown from variousstoichiometric melts have been characterized by Hall effect and FourierTransform Infrared (FT-IR) spectroscopy measurements respectively. TheHall effect measurement results indicate that the net carrierconcentration of P-rich undoped InP is higher than that of In-rich andstoichiometric undoped InP materials. FT-IR spectroscopy measurementsreveal that there are intensive absorption peaks which have been due toa hydrogen related indium vacancy complex V_InH₄.By comparing FT-IR spectra, it is found that P-rich InP material has themost intensive absorption peak of V_lnH₄, whileIn-rich InP material has the weakest absorption peak