We report on AlGaN based deep ultraviolet (UV) light emitting diodes (LED) with a micro-pixel design and emission at 255 nm. The micro-pixel design was adopted to improve the lateral current spreading and to reduce the operation voltages. For a 10×10 interconnected 25 μm diameter micro-pixel design the device series resistance as low as 17.5 Q was measured. For a packaged LED, output powers of 0.9 mW at 160 mA dc and 3.4 mW at 240 mA pulse pump currents were measured.
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机译：我们报告了基于AlGaN的深紫外（UV）发光二极管（LED），该发光二极管具有微像素设计，并在255 nm处发射。采用微像素设计以改善横向电流扩散并降低工作电压。对于10×10互连的25μm直径微像素设计，测量的器件串联电阻低至17.5Q。对于封装的LED，测量的输出功率在160 mA dc时为0.9 mW，在240 mA脉冲泵电流下为3.4 mW。
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