RADIATION HARD 0.13 MICRON CMOS LIBRARY AT IHP

摘要

To support space applications we have developed an0.13 micron CMOS library which should be radiationhard up to 200 krad.The article describes the concept to come to aradiation hard digital circuit and was introduces in2010 [1]. By introducing new radiation hard designrules we will minimize IC-level leakage and singleevent latch-up (SEL). To reduce single event upset(SEU) we add two p-MOS transistors to all flip flops.For reliability reasons we use double contacts in alllibrary elements. The additional rules and the libraryelements are integrated in our Cadence mixed signaldesign kit, “Virtuoso” IC6.1 [2].A test chip is produced with our in house 0.13 micronBiCMOS technology, see Ref. [3]. As next step wewill doing radiation tests according the europeanspace agency (ESA) specifications, see Ref. [4], [5].