Radiation-hard, low power, sub-micron CMOS on a SOI substrate

摘要

A radiation-hard, low-power semiconductor device of the complementary metal-oxide semiconductor (CMOS) type which is fabricated with a sub- micron feature size on a silicon-on-insulator (SOI) substrate (12). The SOI substrate may be of several different types. The sub- micron CMOS SOI device has both a fabrication and structural complexity favorably comparable to conventional CMOS devices which are not radiation- hard. A method for fabricating the device is disclosed.