Optical Characterization of Ge-on-Si Grown by using RTCVD

摘要

We have investigated the characterization of Ge-on-Si Grownby using RTCVD. From the HR-XRD analysis, the Ge epi-layershows good crystalline homogeneity and the lattice parameter ofthe Ge layer along the growth direction was calculated as 5.654 ?,indicating the compressive strain of 0.07%. The Ge peak Ramanshift for each sample indicates compressive strain from the bulk Gereference. The roll-off in photocurrent after 1600 nm is expecteddue to the decreased absorption of Ge.