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Sintering Time Influences on Microstructure and Electrical Properties of Scandium Doped Zinc Oxide Varistor Ceramics

机译:烧结时间对掺Scan氧化锌压敏陶瓷微结构和电性能的影响

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Sc2O3-doped zinc oxide varistor ceramics were prepared by a solid reaction route.The microstructure and the electrical properties was analyzed by scanning electron microscope and X-ray diffraction.Sintering time influences on the microstructure and the electrical properties of Sc2O3-doped zinc oxide varistor ceramics are studied.The results show that the electrical properties of Sc2O3-doped zinc oxide varistor ceramics sintered at 1000 °C and sintered for 1 h was better: the voltage gradient was 653 V/mm;the leakage current was 0.18 μA and the nonlinear coefficient was 57.1.
机译:通过固相反应制备了掺杂Sc2O3的氧化锌压敏电阻陶瓷,通过扫描电子显微镜和X射线衍射分析了其结构和电性能,烧结时间对掺杂Sc2O3的氧化锌压敏电阻的结构和电性能有影响。结果表明,在1000°C烧结1 h的Sc2O3掺杂氧化锌压敏电阻陶瓷的电性能更好:电压梯度为653 V / mm;漏电流为0.18μA,非线性系数为57.1。

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