Low reverse-bias series resistance tunnel junctions (TJs) are the key to improving the performances of high efficiencymulti-junction semiconductor laser diodes (MJLDs). In this paper, InGaAs QW TJ and InGaAs DQW TJ with singleInGaAs layer and double InGaAs layers inserted into GaAs TJs separately, are proposed. TJ chips were fabricated bymetal organic chemical vapor deposition (MOCVD) technology and semiconductor process. The measurement results ofthe devices display that the operating voltage of the InGaAs QW TJ and the InGaAs DQW TJ is lower than that of theGaAs TJ under the same injection current, whether it is a small current or a large current, and the InGaAs DQW TJoperating voltage is lower than that of the InGaAs QW TJ. Both GaAs TJ and InGaAs DQW TJ were applied to 1060 nmdual active region semiconductor laser diode. The ridge lasers with a strip width of 100μm and a cavity length of 2 mmwere fabricated. The working voltage is reduced from 3.81 V to 3.38 V at 1 A drive current. Further experimental resultsindicate that the reverse-bias series resistance of InGaAs QW TJ and InGaAs DQW TJ is lower than that of GaAs TJ,and the performances of InGaAs DQW TJ are the best. This is of great significance to reduce the heat loss of MJLDs andimprove its performances.
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