Spacer patterning lithography as a new process to induce block copolymer alignment by chemo-epitaxy

摘要

Directed Self-Assembly (DSA) of Block Copolymer (BCP) is a promising lithography approach to achieve highresolution pattern dimensions. The current chemo-epitaxy process used to induce block copolymer self-alignment isshowing today its limitations. This is due to the resolution limitation of conventional lithography technics needed for theguide formation, used to achieve BCP alignment. This paper introduces a new chemo-epitaxy process, named ACE(Arkema-CEA), which is based on sidewall image transfer (SIT) patterning. This process has the great advantage tooffer guides of small critical dimension (CD) and pitch that allows the integration of high χ BCP. In this paper, differentparameters of the ACE process are investigated (commensurability, spacer CD …) in order to precisely determine theDSA process window defining the best conditions for BCP alignment. Process window with multiplication factorranging from 2 to 4 are obtained on BCP under investigation.