High Yield, Highly Manufacturable High-Power Wavelength Stabilized DBR Diode Laser

摘要

This paper reports a DBR High Power Diode Laser (DBR-HPDL) realization, emitting up to 14W CW in the 920nmrange. Key feature is the use of a multiple-order Electron Beam Lithography (EBL) optical confining grating, stabilizingon same wafer multiple wavelengths by a manufacturable and reliable technology. In present paper, on the same wafer,three pitches DBR-HPDLs 2.5nm spaced have been demonstrated with excellent characteristics of power, spectral purityand stability. Moreover, excellent uniformity of performances across the wafer with different emitted wavelengthsdemonstrates the maturity of proposed technology for high yield, high volume laser diode production for wavelengthstabilized applications.