An investigation of boron precursor influence on silicon oxide deposition kinetics using silane-oxygen and teos-oxygen mixtures at low pressure

摘要

Influence of boric acid ester tripropylborate on silane-and tetraethylorthosilicte-based oxidation kinetics at low pressure CVD condition has been studied using silicon wafers. Results are expliane with a multi-stage process model, which includes a heterogeneous reaction stage, and consequent stages of homogeneous gas phase formation of intermediate products. These are then floowed by their heterogeneous transformation into the deposited film. Observed results are employed for expolanation of borphosphosilicate glass film deposition features.