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Impact of nitrogen incorporation in ultrathin SiO₂ onthe chemical and electronic structures of the SiO₂/Si(100)interface

机译：超薄SiO _{2 中氮的掺入对其的影响SiO _{2 / Si（100）的化学和电子结构接口}}

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We have studied the chemical modification of ultrathin SiO₂ thermally-grown on Si(100), which is caused by annealing in NH₃ ambient, by using infrared attenuated total reflection(IR-ATR), X-ray photoelectron spectroscopy (XPS) and total photoelectronyield spectroscopy (PYS). We find that nitrogen incorporation with a fewatomic percent in thermally-grown SiO₂ is very effective inreducing the built-in compressive stress near theSiO₂/Si(100) interface

机译：我们已经研究了超薄SiO _{2的化学改性
在Si（100）上热生长，这是由于在NH中退火引起的
_{3 环境，通过使用红外衰减的全反射
（IR-ATR），X射线光电子能谱（XPS）和总光电子
产率光谱法（PYS）。我们发现氮结合有一些
热生长的SiO _{2 中的原子百分数非常有效
减少附近的内置压应力
SiO _{2 / Si（100）界面}}}}

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《Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on 》||p.224-225|共2页
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Yamashita H.; Mizubayashi W.; Murakami H.; Miyazaki S.;
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1. Chemical structure of the ultrathin SiO2/Si(100) interface: An angle-resolved Si 2p photoemission study - art. no. 205310 [J] . Oh JH., Hagimoto Y., Ono K., Physical Review, B. Condensed Matter . 2001 ,第20期

机译：超薄SiO2 / Si（100）界面的化学结构：角分辨Si 2p光发射研究-艺术。没有。 205310
2. Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO_2/Ge_xSi_(1-x)/SiO_2/(100)Si structures with nm-thin Ge_xSi_(1-x) layers [J] . O.Madia, A.P.D.Nguyen, N.H.Thoan, Applied Surface Science . 2014 ,第feba1期

机译：应变对凝结生长具有纳米厚度Ge_xSi_（1-x）层的SiO_2 / Ge_xSi_（1-x）/ SiO_2 /（100）Si结构的Ge悬空键界面缺陷的钝化效率的影响
3. Molecular dynamics study of Si(100)-oxidation: SiO and Si emissions from Si/SiO2 interfaces and their incorporation into SiO2 [J] . Takahashi Norihiko, Yamasaki Takahiro, Kaneta Chioko Journal of Applied Physics . 2014 ,第22期

机译：Si（100）-氧化的分子动力学研究：SiO和Si / SiO2界面中的Si排放以及它们掺入SiO2中
4. Impact of nitrogen incorporation in ultrathin SiO/sub 2/ on the chemical and electronic structures of the SiO/sub 2//Si100 interface [C] . Yamashita, H., Mizubayashi, Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on . 2001

机译：超薄SiO / sub 2 /中掺氮对SiO / sub 2 // Si 100界面化学和电子结构的影响
5. Mn2SiO4,Fe2SiO4,CO2SiO4の弾性定数とオリビン鉱物の高温における弾性的性質 [D] . 角野由夫, SUMINO Y -1

机译：高温下Mn2SiO4，Fe2SiO4，CO2SiO4的弹性常数和橄榄石矿物的弹性
6. Role of Interface Structure and Chain Dynamics onthe Diverging Glass Transition Behavior of SSBR-SiO2-PILElastomers [O] . MohammadAbdul Sattar, Archita Patnaik 2020

机译：界面结构和链动力学的作用SSBR-SiO2-Pil的分歧玻璃过渡行为弹性体
7. Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(100) Si structures with nm-thin GexSi1-x layers [O] . Madia Oreste, Nguyen A. P. D, Thoan N. H, 2014

机译：应变对凝结生长具有纳米GexSi1-x层的SiO2 / GexSi1-x / SiO2 /（100）Si结构的Ge悬空键界面缺陷的钝化效率的影响
8. Theory of the Electronic Structure of the Si-SiO2 Interface [R] . Laughlin, R. B., Joannopoulos, J. D., Chadi, D. J. 1979

机译：si-siO2界面电子结构的理论

Impact of nitrogen incorporation in ultrathin SiO2 onthe chemical and electronic structures of the SiO2/Si(100)interface

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Impact of nitrogen incorporation in ultrathin SiO₂ onthe chemical and electronic structures of the SiO₂/Si(100)interface