首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual >High linearity K-band InP HBT power amplifier MMIC with 62.8 PAEat 21 GHz
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High linearity K-band InP HBT power amplifier MMIC with 62.8 PAEat 21 GHz

机译:具有62.8%PAE的高线性K波段InP HBT功率放大器MMIC在21 GHz

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We report the first InP HBT MMIC power amplifier chip results atK-band. A 21 GHz fully monolithic 2 mil InP HBT power MMIC whichachieves 62.8% PAE with 10 dB gain and 20 dBm output power. A higherpower MMIC at 18.5 GHz achieved 25 dBm output power with 40% PAE at 1 dBcompression under class AB operation with no noticeable gain expansion.The MMIC has low distortion with 3rd order IM suppression C/Iof -30.2 dBc and 5th order suppression C/I of -50.8 dBc at a combinedoutput power of 19.3 dBm. Both amplifiers were operated under low DCpower with a conservative peak current densities of <35 kA/cm2 and a Vce of <3.3 V; showing a potential reliable applicationin communications
机译:我们在以下位置报告了首款InP HBT MMIC功率放大器芯片结果 K波段。 21 GHz完全单片2 mil InP HBT功率MMIC 在10 dB增益和20 dBm输出功率的情况下,可实现62.8%的PAE。更高的 18.5 GHz的功率MMIC在25 dB的功率(PAE)为1 dB时达到了25 dBm的输出功率 AB类操作下的压缩,没有明显的增益扩展。 MMIC失真低,具有3 rd 阶IM抑制C / I -30.2 dBc的组合和-50.8 dBc的五阶抑制C / I在组合时 输出功率为19.3 dBm。两个放大器均在低直流下工作 保守的峰值电流密度<35 kA / cm 2的功率 且Vce为<3.3 V;显示潜在的可靠应用 在通讯中

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