首页> 外文会议>Electronics Manufacturing Technology Symposium, 1997., Twenty-First IEEE/CPMT International >Integrated development and manufacturing methodology for advancedpower MOSFETs
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Integrated development and manufacturing methodology for advancedpower MOSFETs

机译:先进的集成开发和制造方法功率MOSFET

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This paper briefly illustrates the principles of IntegratedProduct Development (IPD) as an effective framework for new productdevelopment. However, the success of management implementing IPD isdependent on a number of fundamental changes in the current developmentprocess. These include emphasis on teamwork and the expansion of therole of manufacturing, as well as the application of Design forManufacturability (DFM) as a business driver. The paper also describesthe superior characteristics of 8-lead power TSSOP packages, which weredeveloped for ultra high density Trench MOSFETs using IPD principles
机译:本文简要说明了集成的原理 产品开发(IPD)作为新产品的有效框架 发展。但是,管理层实施IPD的成功之处在于 取决于当前发展中的一些根本变化 过程。这些包括强调团队合作和扩大 制造的角色以及Design for的应用 可制造性(DFM)作为业务驱动力。本文还介绍了 8引脚功率TSSOP封装的卓越特性是 为使用IPD原理的超高密度Trench MOSFET开发

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