Reliability of soldered silicon devices on copper alloys

摘要

Functional reliability of power ICs is dependent on the integrityof IC/heat transfer joint area. Any major reactions during soldering onthe heat-spreader and transport of reaction products to thesilicon/metal interface have an adverse effect on the IC performance.The robustness of silicon backside metallization and the selection ofmetallization scheme can prevent the solder reactions at the siliconsurface. This paper presents the evaluation of solder reactions withsilicon and their impact on the package reliability