Highly alignment tolerant InGaAs inverted MSM photodetectorheterogeneously integrated on a differential Si CMOS receiver operatingat 1 Gbps

摘要

The increasing demand for high bandwidth, low latency I/O ingigascale systems is challenging current packaging technology.Optoelectronic I/O offers needed performance, but presents newchallenges in mixed signal (digital, analog, optical, RF) design andtest. In addition, the integration of OE interconnect must be suitablefor high volume, low cost manufacturing of digital systems. This paperexplores the heterogeneous integration of very large area, highlyalignment tolerant photodetectors onto Si CMOS differential analogreceiver circuits to realize noise-tolerant receiver interfaces forhigh-density interconnection electrical substrates with integratedoptical links as well as for fiber optic links. The realization of anoptically interconnected microprocessor that employs such aphotodetector will also be discussed