Polarization and electron injection in silicon nitride induced byprotons

摘要

The Kohlrausch behaviour of the polarization currentsj=At-α, which is found in many disordered insulators,has been detected in thin films of silicon nitride also. The materialcontains a small amount of hydrogen due to the growth process. Using apalladium electrode it was possible to incorporate additional hydrogenions, i.e. protons. This results in an increase of A in the aboveformula by a factor 10. Furthermore it is found that electron injectionis enhanced by the presence of additional protons