Undoped Nanostructured Titanium Dioxide thin film (UN) and Cobalt doped nanostructured (CoDN) TiO2 thin film has successfully prepared using sol-gel method and deposited onto silicon and glass substrate by spin coating technique. Nanostructured TiO2 thin film were prepared at 0.1M, 0.2M, 0.3M and 0.4M, Co doped TiO2 thin film was prepared with additional of ion Co at 1at%. The electrical and optical properties of the UN TiO2 thin films and CoDN TiO2 thin film has successfully studied. The electrical properties indicates that both 0.2M of UN TiO2 thin film and CoDN TiO2 thin film gives low of resistance compare to other sol-gel concentration. As we compared both UN TiO2 thin film and CoDN TiO2 thin film, the lowest resistance comes from Cobalt doped TiO2 thin film. For optical properties, CoDN TiO2 thin film gives the highest percentage of transmittance, which is above 80% in visible region (450-1000nm). As for band gap energy, there is decreasing in band gap energy compared from UN TiO2 thin film to CoDN TiO2 thin film.
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机译：采用溶胶-凝胶法成功制备了未掺杂的纳米结构二氧化钛薄膜（UN）和钴掺杂的纳米结构（CoDN）TiO 2 薄膜，并通过旋涂技术将其沉积在硅和玻璃基板上。分别以0.1M，0.2M，0.3M和0.4M制备了纳米结构的TiO 2 薄膜，并添加了1at％的离子Co制备了Co掺杂的TiO 2 薄膜。 。已经成功研究了UN TiO 2 薄膜和CoDN TiO 2 薄膜的电学和光学性质。电学性能表明，与其他溶胶-凝胶浓度相比，0.2 M的UN TiO 2 薄膜和CoDN TiO 2 薄膜均具有较低的电阻。当我们比较UN TiO 2 薄膜和CoDN TiO 2 薄膜时，电阻最低的是钴掺杂的TiO 2 薄膜。对于光学性能，CoDN TiO 2 薄膜具有最高的透射率，在可见光区域（450-1000nm）中透射率超过80％。关于带隙能量，从UN TiO 2 薄膜到CoDN TiO 2 薄膜，带隙能量减小。
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