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Development of DUV resist formulations with excellent performance on metal substrates

机译:开发在金属基材上具有优异性能的DUV抗蚀剂配方

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Abstract: This paper reveals a methodology for substantially eliminating footing on native TiN substrates. The first generation DUV resists, such as APEX-E, reported a foot size of $GRT 100 nm. The large foot size severely limited the capability of these resists. This paper introduces a superior resist for TiN substrate footing, TitaN$+TM$/ photoresist, with a foot size of only 13 nm at 250 nm feature sizes. This resist also has high resolution and fast photospeed, and good process windows for isolated and dense structures. The key design concept was to reduce the surface inhibition at the resist/TiN interface. The key chemistry to accomplish this reduction in surface inhibition is to generate stronger acids at the resist/TiN interface. We also considered high and low acrylate polymers. There was little difference in footing for the high and low acrylate polymers, however, the low acrylate polymer shows superior etch resistance necessary for metal levels.!13
机译:摘要:本文揭示了一种基本消除天然TiN底材立足点的方法。第一代DUV抗蚀剂(例如APEX-E)的英尺尺寸为$ 100 GRT。大的脚尺寸严重限制了这些抗蚀剂的能力。本文介绍了一种用于TiN基板立足的高级抗蚀剂,即TitaN $ + TM $ /光刻胶,在250 nm的特征尺寸下,其脚尺寸仅为13 nm。该抗蚀剂还具有高分辨率和快速的光速,并且对于隔离和密集的结构具有良好的处理窗口。关键设计概念是减少抗蚀剂/ TiN界面的表面抑制。减少表面抑制作用的关键化学方法是在抗蚀剂/ TiN界面上生成更强的酸。我们还考虑了高丙烯酸酯和低丙烯酸酯聚合物。高丙烯酸酯和低丙烯酸酯聚合物的立足点几乎没有差别,但是,低丙烯酸酯聚合物表现出了金属水平所必需的优异的耐蚀性!13

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