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The Development of Chemically Amplified Positive- and Negative-tone Resists for DUV Lithography.

机译：DUV光刻化学放大的抗蚀剂抗蚀剂的发展。

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James W. Thackeray; Timothy Adams; Michael F. Cronin; Mark Denison; Theodore H. Fedynyshyn; Jacque Georger; J. Michael Mori; George W. Orsula; Roger Sinta;
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年度 1994
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1. Negative-tone chemically-amplified resist development for high resolution hybrid lithography [J] . S. Landis, S. Pauliac, R. Hanawa, Microelectronic Engineering . 2004,第Jun期

机译：用于高分辨率混合光刻的负性化学放大抗蚀剂显影
2. Resist pattern peeling assessment in DUV chemically amplified resist [J] . Sohan Singh Mehta, Sun Hai Qin, Moitreyee Mukherjee-Roy, Microelectronics journal . 2004,第5期

机译：DUV化学放大抗蚀剂中的抗蚀剂图案剥离评估
3. Global critical dimension uniformity improvement for mask fabrication with negative-tone chemically amplified resists by zone-controlled postexposure bake [J] . Lothar Berger, Peter Dress, Thomas Gairing, Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第2期

机译：通过区域控制的曝光后烘烤来改善负性化学放大抗蚀剂的掩模制造的全局临界尺寸均匀性
4. Chemical Characteristics of Negative-tone Chemically Amplified Resist For Advanced Mask Making [C] . Kazumasa Takeshi, Naoko Ito, Daisuke Inokuchi, Conference on Photomask and Next-Generation Lithography Mask Technology XI pt.1; 20040414-20040416; Yokohama; JP . 2004

机译：用于高级面罩制造的负性化学放大抗蚀剂的化学特性
5. Exploration of non-chemically amplified resists based on dissolution inhibitors for 193 nm lithography. [D] . Baylav, Burak. 2010

机译：探索基于溶出抑制剂的非化学放大抗蚀剂，用于193 nm光刻。
6. Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake [O] . Hidetatsu Miyoshi, Jun Taniguchi -1

机译：通过使用非化学放大的抗蚀剂和曝光后烘烤来制造具有改善的线边缘粗糙度的高分辨率掩模
7. Recent Advances in the Development of Chemically Amplified Resists for Applications in Electron Beam Lithography. [O] . David R. Medeiros 2002

机译：电子束光刻应用化学放大抗蚀剂的最新进展。

The Development of Chemically Amplified Positive- and Negative-tone Resists for DUV Lithography.

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