Applications of GaAs grade-period doping superlattice for negative-differential-resistance device

摘要

Abstract: The characteristics of a GaAs graded-period$delta@-doped superlattice grown by molecular beamepitaxy were studied. It is shown that a novel S-shapednegative differential conductivity (NDC) occurred bothat 300 K and 77 K. Besides, a two-state avalanchemultiplication process, i.e., a middle quasi- stableregion is seen at 77 K. Finally, there is aninteresting hysteresis phenomenon due to the trappedholes created by the avalanche multiplications. Thesignificant control voltage ratio, Vs/V$Eta@, of thestudied structure introduces a good potential forapplication on the switching field.!14