High-Low Doping AlGaAs / GaAs HEMT Devices

摘要

A GaAs buffer layer (12) and an InGaAs channel layer (13) which are not applied to the GaAs silicon substrate (11) are formed in order to minimize the source-drain capacitance and increase the breakdown voltage of the HEMT device for ultra-On the InGaAs channel layer 13, N / N⁺= 0.1 ratio of n⁺AlGaAs donor layer 14 and nAlGaAs layer 15 are formed.