Influence of polarization-induced electric field on subband structure and electron distribution in Al_xGa_1-xN/GaN double quantum wells

摘要

Influence of the polarization-induced electric field on the subband structure and the electron distribution in the Al_xGa_1-xN/GaN coupled double quantum wells (DQWs) has been studied by solving the coupled Schrodinger's and Poisson 's equations self-consistently. It is found that although the two wells have the same width and the same depth the polarization-induced potential drop leads to the asymmetric potential profile of the Al_xGa_1-xN/GaN DQWs, The polarization-induced Stark shift leads to the drastic change of the relative location between the even and the odd order subband levels, and thus resulting in the asymmetric distribution of the electron in the two wells.