This paper is focused on a fundamental scientific and technical problem of research and development of high-performance on-chip interconnections for next-generation integrated devices of micro-, nano- and microwave electronics. Previously we proposed an injection laser with functionally integrated optical modulator and double heterostructure, which can be used as an efficient source of light for on-chip optical interconnections. To detect short laser pulses generated by the laser-modulator, a high-speed and technologically compatible photodetector is required. In this paper we develop the non-stationary drift-diffusion model of transient processes in high-speed photodetectors, algorithms of its numerical implementation and applied software intended for one- and two-dimensional simulation of photosensitive optoelectronic devices with various structures. According to the obtained results of driftdiffusion numerical simulation, it is reasonable to research the methods of carrier lifetime reduction in the active regions of photodetectors for on-chip optical interconnections.
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